Published 2018 | Version v1
Journal article Metadata-only

A study of the characteristics of semiconductor-based detectors of alpha-radiation

Creators

  • 1. National Science Center Kharkov Institute of Physics and Technology Kharkov (Ukraine)

Description

This paper presents a study and comparison of the characteristics of radiation detectors based on CdZnTe and CdMnTe crystals. The crystals are grown by the Bridgman method under high pressure of an inert gas. A special setup was made and the method for measuring the efficiency of charge collection and was developed. Based on the measurements, the characteristics of materials of different quality were compared.

Additional details

Publishing Information

Journal Title
Journal of Radiation Researches
Journal Volume
5
Journal Issue
2
Journal Page Range
p. 37-41
ISSN
2312-3001

INIS

Country of Publication
Azerbaijan
Country of Input or Organization
Azerbaijan
INIS RN
50024555
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
BRIDGMAN METHOD; CRYSTAL GROWTH METHODS; ELECTRON MOBILITY; LIFETIME; RADIATION DETECTORS
Descriptors DEC
CRYSTAL GROWTH METHODS; MEASURING INSTRUMENTS; MOBILITY; PARTICLE MOBILITY

Optional Information

Notes
6 figs.; 3 refs.