Materials science and fabrication processes for a new MEMS technology based on ultrananocrystalline diamond thin films
Creators
- 1. Argonne National Laboratory, Materials Science Division, 9700 South Cass Avenue, Argonne, IL 60439 (United States)
- 2. Department of Mechanical Engineering, Northwestern University, Evanston, IL 60208-3111 (United States)
Description
Most MEMS devices are currently based on silicon because of the available surface machining technology. However, Si has poor mechanical and tribological properties which makes it difficult to produce high performance Si based MEMS devices that could work reliably, particularly in harsh environments; diamond, as a superhard material with high mechanical strength, exceptional chemical inertness, outstanding thermal stability and superior tribological performance, could be an ideal material for MEMS. A key challenge for diamond MEMS is the integration of diamond films with other materials. Conventional CVD thin film deposition methods produce diamond films with large grains, high internal stress, poor intergranular adhesion and very rough surfaces, and are consequently ill-suited for MEMS applications. Diamond-like films offer an alternative, but are deposited using physical vapour deposition methods unsuitable for conformal deposition on high aspect ratio features, and generally they do not exhibit the outstanding mechanical properties of diamond. We describe a new ultrananocrystalline diamond (UNCD) film technology based on a microwave plasma technique using argon plasma chemistries that produce UNCD films with morphological and mechanical properties that are ideally suited for producing reliable MEMS devices. We have developed lithographic techniques for the fabrication of UNCD MEMS components, including cantilevers and multilevel devices, acting as precursors to micro-bearings and gears, making UNCD a promising material for the development of high performance MEMS devices. We also review the mechanical, tribological, electronic transport, chemical and biocompatibility properties of UNCD, which make this an ideal material for reliable, long endurance MEMS device use. (topical review)
Availability note (English)
Available online at http://stacks.iop.org/0953-8984/16/R539/cm4_16_R02.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0953-8984/16/R539/cm4_16_R02.pdf; http://www.iop.org/;
- DOI
- 10.1088/0953-8984/16/16/R02;
- PII
- S0953-8984(04)56693-6;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 16
- Journal Issue
- 16
- Journal Page Range
- p. R539-R552
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36000545
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARGON; DIAMONDS; ELECTROMECHANICS; FABRICATION; MECHANICAL PROPERTIES; MICROSTRUCTURE; NANOSTRUCTURES; PHYSICAL VAPOR DEPOSITION; PLASMA; SEMICONDUCTOR DEVICES; SILICON; STRESSES; THIN FILMS
- Descriptors DEC
- CARBON; DEPOSITION; ELEMENTS; FILMS; FLUIDS; GASES; MECHANICS; MINERALS; NONMETALS; RARE GASES; SEMIMETALS; SURFACE COATING