Microstructure of Czochralski silicon implanted with deuterium and annealed under high pressure

The effect of high temperature (HT≤1270 K)-high pressure (HP, up to 1.15 GPa) on the microstructure of Cz-Si, implanted with D+ (dose 1.7x1017 cm-2, energy 200 keV), was investigated by TEM, SIMS, X-ray and related methods. The HT-HP treatment at ≤923 K results in a creation of numerous cavities and clusters while dislocations are formed mostly at ≥1073 K. The HT-HP effect on the diffusivity of implanted deuterium and of oxygen interstitials and on the Si-D bonds is responsible for the oxygen accumulation strongly suppressed under HP and for transformation of implantation-induced defects