Published June 2004 | Version v1
Journal article

Oxidation state during growth of very thin oxide on Ti(0001) surface

  • 1. Tohoku Univ., Institute of Multidisciplinary Research for Advanced Materials, Sendai, Miyagi (Japan)
  • 2. Akita National College of Technology, Dept. of Material Engineering, Akita (Japan)
  • 3. Japan Atomic Energy Research Inst., Kansai Research Establishment, Mikazuki, Hyogo (Japan)
  • 4. Stanford Univ., Stanford Linear Accelerator Center, CA (United States)
  • 5. Kumamoto Univ., Dept. of Material Science and Technology, Kumamoto (Japan)
  • 6. Chiba Inst. of Technology, Dept. of Precision Engineering, Narashino, Chiba (Japan)

Description

The oxidation reaction on the Ti(0001) surface at 400degC and 3.7x10-6 Pa of O2 pressure was observed in real time by photoelectron spectroscopy using synchrotron radiation to investigate the oxygen uptake curve and oxidation state during growth of very thin oxide. The oxygen uptake curve increased rapidly with a plateau at O2 doses of 45-85 L, where the Ti 2p intensity for the metallic Ti component due to the substrate also showed a plateau between rapid decreases. The restart of oxide growth following the plateau was observed to be associated with a drastic change of the oxidation state from TiO to TiO2. Thus high-temperature oxidation on the Ti(0001) surface progresses through the initial rapid growth with preferential appearance of TiO and Ti2O3, subsequent temporary saturation of oxide growth and then rapid growth of oxide with significant changes of the oxidation state. (author)

Additional details

Publishing Information

Journal Title
Shinku
Journal Volume
47
Journal Issue
6
Journal Page Range
p. 457-461
ISSN
0559-8516

Optional Information

Notes
11 refs., 3 figs.