Determination of the local environment of silicon and the microstructure of quaternary CrAl(Si)N films
- 1. Lawrence Berekeley National Laboratory, Berkeley, CA 94720 (United States)
- 2. Departamento de Fisica Aplicada, Universidad Autonoma de Madrid, 28049 Madrid (Spain)
- 3. Swiss Federal Laboratories for Material Testing and Research (EMPA), 129 Ueberlandstrasse, CH-8600 Duebendorf (Switzerland)
- 4. BESSY GmbH, Albert-Einstein-Strasse 15, 12489 Berlin (Germany)
Description
Nanocomposite CrAlSiN compounds prepared by the cathodic arc evaporation technique were subjected to structural and mechanical characterization tests. X-ray diffraction, X-ray absorption spectroscopy (XAS) and transmission electron microscopy (TEM) were employed to investigate the effects of Si addition on the structure and phase development of the metastable NaCl structure of high aluminum CrAlN films. TEM studies revealed that partial substitution of the metal component by Si in CrAlN results in the nucleation of a wurtzite h-AlN phase even for amounts of silicon as low as ∼2-3 at.%. XAS measurements at the Cr and Si K-edges indicated that the local environment of Cr atoms is strongly affected by the Si addition, and that silicon may also be part of the crystalline phase. These results indicate the formation of complex Cr-Si-X compounds, where X can be N, Al or both, and the formation of composite nanocrystalline CrAlSiN films
Additional details
Identifiers
- DOI
- 10.1016/j.actamat.2006.11.014;
- PII
- S1359-6454(06)00824-X;
Publishing Information
- Journal Title
- Acta Materialia
- Journal Volume
- 55
- Journal Issue
- 6
- Journal Page Range
- p. 2129-2135
- ISSN
- 1359-6454
- CODEN
- ACMAFD
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39034742
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; ALUMINIUM NITRIDES; CHROMIUM COMPOUNDS; CRYSTALS; EVAPORATION; FILMS; MICROSTRUCTURE; NANOSTRUCTURES; NUCLEATION; PHYSICAL VAPOR DEPOSITION; SILICON; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY
- Descriptors DEC
- ALUMINIUM COMPOUNDS; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PHASE TRANSFORMATIONS; PNICTIDES; SCATTERING; SEMIMETALS; SPECTROSCOPY; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.