Change of the refractive index in ion implanted quartz and fused silica

Argon and hydrogen ion implantation in quartz and fused silica with doses ranging from 1013 to 1017 ions/cm2 are conducted at room temperature. The change of the refractive index is measured in dependence of the ion dose, the ion energy and successive annealing. From the saturation dose the cross section of the area changed by a single ion is estimated. Differences in the dose dependence of the refractive index change on the ion type are interpreted as an effect of the energy deposited into atomic collisions. A significant difference in the annealing of the radiation induced internal stress and the refractive index change is shown. (author)