In situ x-ray scattering study on the evolution of Ge island morphology and relaxation for low growth rate: Advanced transition to superdomes

The kinetics of the growth of Ge superdomes and their facets on Si(001) surfaces are analyzed as a function of deposited Ge thickness for different growth temperatures and at a low growth rate by in situ grazing-incidence small-angle x-ray scattering in combination with in situ grazing-incidence x-ray diffraction. At a low growth rate, intermixing is found to be enhanced and superdomes are formed already at lower coverages than previously reported. In addition, we observe that at the dome-to-superdome transition, a large amount of material is transferred into dislocated islands, either by dome coalescence or by anomalous coarsening. Once dislocated islands are formed, island coalescence is a rare event and introduction of dislocations is preferred. The superdome growth is thus stabilized by the insertion of dislocations during growth.