Published February 1977 | Version v1
Journal article Metadata-only

Electronic and optical parameters of an oxygen-related center in Zn-Te

Creators

  • 1. CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France). Dept. de Recherche Fondamentale

Description

An electron trapping center (Esub(c) - 0.44 eV) has been characterized by the photocapacitance technique. This center appears in oxygen contaminated crystals after ion implantation and annealing in Zn vapour. It has also been created by oxygen implantation in oxygen-free crystals. This center might result of an Osub(Te)-D+ associate. (author)

Additional details

Identifiers

DOI
10.1016/0038-1098(77)91385-0;

Publishing Information

Journal Title
Solid State Communications
Journal Volume
21
Journal Issue
5
Series
Solid State Commun.
Journal Page Range
503-507
ISSN
0038-1098

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
8302256
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CAPACITORS; CRYSTAL DEFECTS; ELECTRONS; IMPURITIES; ION IMPLANTATION; OXYGEN; OXYGEN IONS; PHOTONS; SCHOTTKY BARRIER DIODES; TELLURIUM; TRAPPING; TRAPS; ZINC
Descriptors DEC
CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRICAL EQUIPMENT; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; IONS; LEPTONS; MASSLESS PARTICLES; METALS; NONMETALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS

Optional Information

Notes
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