High-powered, solid-state rf systems

Over the past two years, the requirement to supply megawatts of rf power for space-based applications at uhf and L-band frequencies has caused dramatic increases in silicon solid-state power capabilities in the frequency range from 10 to 3000 MHz. Radar and communications requirements have caused similar increases in gallium arsenide solid-state power capabilities in the frequency ranges from 3000 to 10,000 MHz. This paper reviews the present state of the art for solid-state rf amplifiers for frequencies from 10 to 10,000 MHz. Information regarding power levels, size, weight, and cost will be given. Technical specifications regarding phase and amplitude stability, efficiency, and system architecture will be discussed. Solid-stage rf amplifier susceptibility to radiation damage will also be examined