Nanoscale electrical and crystallographic properties of ultra-thin dielectric films
Creators
- 1. Institute of Materials Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China)
- 2. Department of Physics and Astronomy, University of Southern California, Los Angeles, California 90089 (United States)
Description
Thin SrTiO3 (STO) films with a thickness of 14 nm were grown on the Pt/Ti/SiO2/Si (STO/Pt) and Ru/SiO2/Si (STO/Ru) substrates at room temperature by radio-frequency magnetron sputtering. The as-deposited STO films were then post-annealed at 450-650 oC in an oxygen atmosphere in order to obtain various crystallographic features. The crystalline STO/Pt and STO/Ru films were obtained at an annealing temperature above 550 oC. The results of X-ray photoelectron spectroscope reveal that the crystalline STO films have a microscopically homogeneous film structure. Besides, secondary ion mass spectrometry depth profiles show an increase of interface roughness with an increasing annealing temperature of the STO films. Atomic force microscope images also show that the surface of the crystalline STO/Ru film is smoother than that of the STO/Pt film at a given annealing temperature. The effective improvement in the chemical homogeneity and surface roughness of the STO films results in a considerable decrease in the nanostructural leakage current of the STO films upon the use of a Ru electrode.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2010.03.021Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2010.03.021;
- PII
- S0040-6090(10)00321-4;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 518
- Journal Issue
- 21,suppl.1
- Journal Page Range
- p. S17-S21
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 10. international symposium on sputtering and plasma processes
- Acronym
- ISSP2009
- Dates
- 8-10 Jul 2009
- Place
- Kanazawa (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42060058
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTALLOGRAPHY; DIELECTRIC MATERIALS; ELECTRICAL PROPERTIES; MAGNETRONS; MASS SPECTROSCOPY; NANOSTRUCTURES; OXYGEN; RADIOWAVE RADIATION; SILICON OXIDES; SPUTTERING; STRONTIUM TITANATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; HEAT TREATMENTS; MATERIALS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; RADIATIONS; SCATTERING; SILICON COMPOUNDS; SPECTROSCOPY; STRONTIUM COMPOUNDS; TEMPERATURE RANGE; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.