Published 1992 | Version v1
Book

Femtosecond electron relaxation in InGaAs lattice-matched to InP

  • 1. Cornell Univ., Ithaca, NY (United States). School of Electrical Engineering

Description

Carrier energy relaxation times have been measured in In0.53Ga0.47As grown by MBE on InP. Layer thicknesses from 0.5 to 3 microns have been studied. An NaCl color center laser using additive pulse mode-locking supplied 150 femtosecond pulses with photon energies between 780 and 806 meV. These were used for time resolved optical saturation measurements near the 750 meV material bandgap. Carrier densities between 0.4 x 1018 and 5.7 x 1018 were achieved. Lifetimes of about 150 femtoseconds are reported. These are observed to decrease with increasing carrier density and with decreasing photon energy

Part of:
Ultrafast lasers probe phenomena in semiconductors and superconductors

Additional details

Publishing Information

Publisher
SPIE--The International Society for Optical Engineering.
Imprint Place
Bellingham, WA (United States)
ISBN
0-8194-0838-7
Imprint Title
Ultrafast lasers probe phenomena in semiconductors and superconductors
Imprint Pagination
282 p.
Journal Page Range
p. 140-145.

Conference

Title
physics toward device applications.
Acronym
Symposium on advances in semiconductors and superconductors
Dates
23-27 Mar 1992.
Place
Somerset, NJ (United States).

Optional Information

Secondary number(s)
CONF-920309--.