Published March 1987
| Version v1
Journal article
An optimal annealing technique for ohmic contacts to ion-implanted n-layers in semi-insulating indium phosphide
Creators
- 1. Allied Corp., Columbia, MA (USA). Bendix Aerospace Technology Center
Description
An optimal annealing process was developed for sintering Au-Ge ohmic contacts to ion-implanted semi-insulating InP substrates. Contacts were annealed using a standard furnace, graphite strip heater and a lamp annealer. Alloying at 3750C for 3 min was found to be most suitable for achieving good contact morphology and lowest contact resistivity. Of the three techniques, the lamp annealing technique was found to give the best results when contacts were annealed under a Si02 cap. Contact resistivity as low as 8 x 10-6 cm2 was obtained for ion-implanted n+ layers in semi-insulating InP. (author)
Additional details
Publishing Information
- Journal Title
- Solid-State Electron.
- Journal Volume
- 30
- Journal Issue
- 3
- Series
- Solid-State Electron.
- Journal Page Range
- 253-258
- ISSN
- 0038-1101
- CODEN
- SSELA
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 18053729
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GERMANIUM; GOLD; INDIUM PHOSPHIDES; ION IMPLANTATION; N-TYPE CONDUCTORS; SINTERING
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTS; FABRICATION; HEAT TREATMENTS; INDIUM COMPOUNDS; MATERIALS; METALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TRANSISTORS; TRANSITION ELEMENTS