Effect of gamma radiation defects on the electrophysical properties in the p-CuTlS monocrystal

The surface morphology of p-type CuTlS single crystal with specific resistance p=40 Ω·cm in the initial state and after exposure to gamma radiation is studied by atomic force microscopy. It is shown that the surface relief undergoes modification in the absorbed dose region of D_γ=500krad. Experimental results show that the activation energy of the retention center during radiation depends on the radiation dose, and the gradient of the curve does not change at Φ<500 krad, increases at Φ> 500 krad, and the resulting defects have a deeper energy level.