Published January 15, 2012 | Version v1
Journal article

Electronic structure and optical properties of Sn-doped ZnO

  • 1. Heilongjiang Key Laboratory for Low Dimensional System and Mesoscopic Physics, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025 (China)
  • 2. Institute for Advanced Ceramics, Harbin Institute of Technology, Harbin 150080 (China)

Description

Abstracts: A deeper understanding on the atomic and electronic structure of ZnO material is crucial for explaining, predicting, and optimizing its properties, and to suggest materials for better performance. In this work, we present our first-principle studies of the energy bands associated with Sn impurity in ZnO using supercell models. We find that, due to Sn doping, the conduction band moves to the low-energy region, and the band gap becomes smaller than that of pure ZnO. In terms of the calculated band structures, we are also able to explain qualitatively the measured optical properties of Sn-doped ZnO powders.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2011.10.045

Additional details

Identifiers

DOI
10.1016/j.physb.2011.10.045;
PII
S0921-4526(11)01099-4;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
407
Journal Issue
2
Journal Page Range
p. 268-270
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.