Effect of #betta#-radiation on aluminium-n-silicon interface properties

It is found that Al film in the Al-Si structure is rearranged and Si dissolved in Al segregates on the Al film surface in response to betatron #betta#-radiation. Moreover, amount of aluminium and carbon increases while that of fluorine decreases in the Si near-surface layer. The observed redistribution of Si, Al and impurities (C, F) in these structures is probably due to both the radiation defects which arise in the Al film and in Si and due to Si doping with 27Al nuclei resulted from photonuclear reactions