Published December 1981 | Version v1
Journal article Metadata-only

Ion beam induced atomic distribution of implanted range profiles (the system Ne → Ge/Si)

Creators

  • 1. Comision Nacional de Energia Atomica, San Carlos de Bariloche (Argentina). Centro Atomico Bariloche
  • 2. Salford Univ. (UK). Dept. of Electrical Engineering
  • 3. Alicante Univ. (Spain). Facultad de Ciencias Fisicas

Description

The redistribution of germanium atoms previously implanted at 40 keV in Si was investigated after bombardment with various fluences (1015 to 1017 cm-2) of 20 keV Ne+ ions. High resolution RBS was used for the depth analysis. The observed redistribution of the germanium profile is discussed in terms of the Ne energy deposition distribution, and some preliminary theoretical estimates are given. (author)

Additional details

Publishing Information

Journal Title
Radiat. Eff. Lett.
Journal Volume
67
Journal Issue
3
Series
Radiat. Eff. Lett.
Journal Page Range
69-72
ISSN
0142-2448

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
13670086
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANGULAR DISTRIBUTION; ATOMS; BACKSCATTERING; CRYSTAL LATTICES; DEPTH; ENERGY SPECTRA; GERMANIUM; GERMANIUM IONS; ION IMPLANTATION; KEV RANGE 10-100; NEON IONS; PHYSICAL RADIATION EFFECTS; SILICON; SPATIAL DISTRIBUTION
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; DIMENSIONS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; METALS; RADIATION EFFECTS; SCATTERING; SEMIMETALS; SPECTRA