Published May 21, 2012 | Version v1
Journal article

Empirical interatomic potential for the mechanical, vibrational and thermodynamic properties of semiconductors

  • 1. School of Electrical and Electronic Engineering, University of Manchester, Sackville Street Building, M13 9PL, Manchester (United Kingdom)
  • 2. Intercollege Larnaca, 52 Famagusta Avenue, Larnaca-Dhekelia Road, Larnaca, 6019 (Cyprus)

Description

Empirical models are widely used to simulate large atomic structures where instead ab initio methods are not practical because of computational limitations. However models such as Tersoff potential, Valence Force Field, or Stillinger- Weber potential have some restrictions in correctly predicting simultaneously both elastic and vibrational properties of the crystals. Thus, extension of the functional form of the potentials by including further atomic interactions compared to the simple 2- and 3-body terms, is required. An empirical interatomic potential is proposed which represents a substantial improvement of the Tersoff potential for semiconductors modelling. The new model includes multi-bond interactions and the volume dependency by considering the tetrahedron distortions of the covalent crystal.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/367/1/012015

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
367
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
3. workshop on theory, modelling and computational methods for semiconductors
Dates
18-20 Jan 2012
Place
Leeds (United Kingdom)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43104510
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COMPUTERIZED SIMULATION; COVALENCE; CRYSTALS; ELASTICITY; GALLIUM NITRIDES; INTERATOMIC FORCES; POTENTIALS; SEMICONDUCTOR MATERIALS; THERMODYNAMIC PROPERTIES; VALENCE
Descriptors DEC
GALLIUM COMPOUNDS; MATERIALS; MECHANICAL PROPERTIES; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SIMULATION