Empirical interatomic potential for the mechanical, vibrational and thermodynamic properties of semiconductors
Creators
- 1. School of Electrical and Electronic Engineering, University of Manchester, Sackville Street Building, M13 9PL, Manchester (United Kingdom)
- 2. Intercollege Larnaca, 52 Famagusta Avenue, Larnaca-Dhekelia Road, Larnaca, 6019 (Cyprus)
Description
Empirical models are widely used to simulate large atomic structures where instead ab initio methods are not practical because of computational limitations. However models such as Tersoff potential, Valence Force Field, or Stillinger- Weber potential have some restrictions in correctly predicting simultaneously both elastic and vibrational properties of the crystals. Thus, extension of the functional form of the potentials by including further atomic interactions compared to the simple 2- and 3-body terms, is required. An empirical interatomic potential is proposed which represents a substantial improvement of the Tersoff potential for semiconductors modelling. The new model includes multi-bond interactions and the volume dependency by considering the tetrahedron distortions of the covalent crystal.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/367/1/012015Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 367
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1742-6596
Conference
- Title
- 3. workshop on theory, modelling and computational methods for semiconductors
- Dates
- 18-20 Jan 2012
- Place
- Leeds (United Kingdom)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43104510
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COMPUTERIZED SIMULATION; COVALENCE; CRYSTALS; ELASTICITY; GALLIUM NITRIDES; INTERATOMIC FORCES; POTENTIALS; SEMICONDUCTOR MATERIALS; THERMODYNAMIC PROPERTIES; VALENCE
- Descriptors DEC
- GALLIUM COMPOUNDS; MATERIALS; MECHANICAL PROPERTIES; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SIMULATION