Published March 3, 2008 | Version v1
Journal article

Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy

  • 1. Chemistry Research Laboratory, Department of Chemistry, University of Oxford, Mansfield Road, Oxford OX1 3TA (United Kingdom)
  • 2. Carl Zeiss SMT AG, Carl-Zeiss-Strasse 56, 73447 Oberkochen (Germany)
  • 3. Oxford University Begbroke Science Park, Sandy Lane, Yarnton, Kidlington, Oxon OX5 1PF (United Kingdom)
  • 4. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)

Description

Thin films of In2O3 have been grown on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy with a substrate temperature of 650 deg. C. Ordered epitaxial growth was confirmed by high resolution transmission electron microscopy. The position of the valence band onset in the x-ray photoemission spectra of the epitaxial films is found to be inconsistent with the widely quoted value of 3.75 eV for the fundamental bandgap of In2O3 and suggests a revised value of 2.67 eV

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
92
Journal Issue
9
Journal Page Range
p. 092117-092117.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2008 American Institute of Physics