Determination of coefficients of selective cathode sputtering of surface oxide layers

Proposed is a calculation method of selective cathode sputtering coefficients for binary systems represents chemical compounds with gas-forming element. The method possibilities are demonstrated at the SiO2 and Ta2O5 example. According to the obtained values of coefficients calculated is the change of oxide surface compositions at the expense of selective sputtering under conditions of high vacuum, that permits to increase considerably the correctness of the analysis results