Published 1988 | Version v1
Book Metadata-only

In situ tem observations of heavy ion damage in gallium arsenide

Creators

  • 1. Univ. of Illinois, Urbana, IL (USA)
  • 2. Argonne National Lab., Argonne, IL (USA)

Description

This paper discusses transmission electron microscopy experiments performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEM - Ion. Accelerator Facility at Argonne National Laboratory. Direct-impact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30 Κ and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
0-931837-68-5
Imprint Title
Fundamentals of beam-solid interactions and transient thermal processing
Imprint Pagination
763 p.
Series
Materials Research Society symposium proceedings. Volume 100.
Journal Page Range
p. 293-298.

Conference

Title
Symposium on fundamentals of beam-solid interactions and transient thermal processing.
Dates
30 Nov - 3 Dec 1987.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21018570
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ACCELERATOR FACILITIES; ANL; ANNEALING; EXPERIMENTAL DATA; GALLIUM ARSENIDES; HEAVY IONS; IRRADIATION; LATTICE PARAMETERS; LOW TEMPERATURE; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; TRANSMISSION ELECTRON MICROSCO
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; DATA; ELECTRON MICROSCOPY; GALLIUM COMPOUNDS; HEAT TREATMENTS; INFORMATION; IONS; MATERIALS; MICROSCOPY; NATIONAL ORGANIZATIONS; NUMERICAL DATA; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; US AEC; US DOE; US ERDA; US ORGANIZATIONS

Optional Information

Secondary number(s)
CONF-8711126--.