Published April 2021
| Version v1
Journal article
Recent development of thermoelectric response theory and its applications
- 1. Tokyo University of Science, Faculty of Science, Tokyo (Japan)
- 2. Tokyo University, Graduate School of Science, Tokyo (Japan)
- 3. Tokyo University of Science, Tokyo (Japan)
Description
Based on the general framework of the Kubo and Luttinger's linear response theory, we clarified the range of validity of Boltzmann transport theory for thermoelectric response using a quite general model including both periodic and random potentials, electron-phonon interaction, and electron-electron interaction. As two typical examples beyond the Boltzmann transport regime, we introduce (1) the band-edge engineering of thermoelectric power factor of semi-conducting carbon nanotubes and (2) the huge Seebeck coefficient of FeSb2 due to the phonon drag associated with impurity band in the narrow band gap. (author)
Availability note (English)
Available from DOI: https://doi.org/10.11316/butsuri.76.4_202Additional details
Additional titles
- Original title (Japanese)
- 熱電応答理論の最近の発展とその応用
Identifiers
Publishing Information
- Journal Title
- Nippon Butsuri Gakkai-Shi (Online)
- Journal Volume
- 76
- Journal Issue
- 4
- Series
- 雑誌名:日本物理学会誌
- Journal Page Range
- p. 202-207
- ISSN
- 2423-8872
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 52113269
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- BOLTZMANN EQUATION; CARBON NANOTUBES; CORRELATION FUNCTIONS; CRYSTAL DOPING; DENSITY OF STATES; ELECTRIC CONDUCTIVITY; FERMI LEVEL; FIELD EFFECT TRANSISTORS; POWER FACTOR; SEEBECK EFFECT; TEMPERATURE GRADIENTS; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES
- Descriptors DEC
- CARBON; DIFFERENTIAL EQUATIONS; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY LEVELS; EQUATIONS; FUNCTIONS; INTEGRO-DIFFERENTIAL EQUATIONS; KINETIC EQUATIONS; NANOSTRUCTURES; NANOTUBES; NONMETALS; PARTIAL DIFFERENTIAL EQUATIONS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; THERMODYNAMIC PROPERTIES; TRANSISTORS
Optional Information
- Notes
- 32 refs., 3 figs.