Published 1990
| Version v1
Book
Laser-assisted MOCVD growth of CdTe
Creators
- 1. Santa Barbara Research Center, Goleta, CA (United States)
- 2. Hughes Research Lab., Malibu, CA (United States)
Description
Earlier experiments on the laser assisted deposition of CdTe showed how growth rate depended on substrate temperature, reactant partial pressure, and average laser power. In this paper, the results are extended to show how CdTe growth rate depends on the reactor total pressure, the total flow rate, and the position of the laser beam. A CdTe growth rate of 2.9 μm H-1 at 203 degrees C has been obtained. The layers are specular, with no evidence of gas phase pre-reaction or nucleation. A simple, semi-quantitative model of the deposition process agrees well with the available data
Additional details
Publishing Information
- Publisher
- The Electrochemical Society.
- Imprint Place
- Pennington, NJ (United States)
- Imprint Title
- Proceedings of the eleventh international conference on chemical vapor deposition 1990
- Imprint Pagination
- 735 p.
- Journal Page Range
- p. 617-625.
Conference
- Title
- 11. international conference on chemical vapor deposition.
- Dates
- 14-19 Oct 1990.
- Place
- Seattle, WA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23007446
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM TELLURIDES; CHEMICAL VAPOR DEPOSITION; LASER RADIATION; MATHEMATICAL MODELS; SUBSTRATES; VERY HIGH TEMPERATURE
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELECTROMAGNETIC RADIATION; RADIATIONS; SURFACE COATING; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-901088--.