Published February 2, 2009
| Version v1
Journal article
The copper influence on the PL spectra of CdTe thin film as a component of the CdS/CdTe heterojunction
- 1. Semiconductor Physics Lab, Faculty of Physics, Moldova State University, 60 A. Mateevici str., Chisinau, MD 2009 (Moldova, Republic of)
- 2. Center for Clean Energy and Vehicles, Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave., Tampa, FL 33620 (United States)
- 3. Engineering Department, University of Bacau, 157 Calea Marasesti, 600115 Bacau (Romania)
Description
The influence of annealing in the presence of CdCl2 and a thin copper layer deposited onto CdTe on the photoluminescence spectra of CdTe, as a component of CdS/CdTe heterojunction, has been studied for two excitation wavelengths: 0.337 μm and 0.6328 μm. The behavior of the PL was studied as a function of the measurement temperature and excitation intensity. At 0.6328 μm excitation, the interface PL consists of a known 1.43X band, and the chloride annealing enhances radiative transitions at 1.536 eV. The intensity of the 1.536 eV transitions increases when Cu is present. The PL of as-deposited CdTe films prepared in the presence of oxygen has the 1.45X band attenuated when excited with 0.337 μm excitation wavelength
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2008.10.087Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2008.10.087;
- PII
- S0040-6090(08)01320-5;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 517
- Journal Issue
- 7
- Journal Page Range
- p. 2195-2201
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- Symposium L: Thin film chalogenide photovoltaic materials
- Acronym
- EMRS 2008 spring meeting
- Dates
- 26-30 May 2008
- Place
- Strasbourg (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40061842
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CADMIUM CHLORIDES; CADMIUM SULFIDES; CADMIUM TELLURIDES; COPPER; EV RANGE 01-10; HETEROJUNCTIONS; INTERFACES; LAYERS; PHOTOLUMINESCENCE; SPECTRA; THIN FILMS
- Descriptors DEC
- CADMIUM COMPOUNDS; CADMIUM HALIDES; CHALCOGENIDES; CHLORIDES; CHLORINE COMPOUNDS; ELEMENTS; EMISSION; ENERGY RANGE; EV RANGE; FILMS; HALIDES; HALOGEN COMPOUNDS; HEAT TREATMENTS; INORGANIC PHOSPHORS; LUMINESCENCE; METALS; PHOSPHORS; PHOTON EMISSION; SEMICONDUCTOR JUNCTIONS; SULFIDES; SULFUR COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.