Electronic structure of the low-dimensional transition metal oxyhalide VOCl
Creators
- 1. Experimentelle Physik 4, Universitaet Wuerzburg (Germany)
- 2. Institut fuer Theoretische Physik, Universitaet Frankfurt (Germany)
- 3. S.N. Bose National Centre for Basic Sciences, Kolkata (India)
Description
In the quest for RVB-like superconductivity, layered oxyhalides of the form MOX (M=Ti,V; X=Cl,Br) have been discussed some fifteen years ago as possible candidates. This was due to their low-dimensional crystal structure involving frustrated triangular lattice planes. While no superconducting state in these Mott insulators was observed yet, other interesting phenomena, e.g. an unconventional spin-Peierls transition, have been found in TiOX. The isostructural material VOCl has a 3d2 configuration and shows antiferromagnetic ordering below 150K; magnetic susceptibility measurements show an anisotropy along the a-axis. Electronically, however, the degree of one-dimensionality observed by photoemission is reduced compared to the well-studied 3d1 TiOX systems. LDA+U calculations indicate that VOCl is a Mott insulator despite its two 3d electrons. Upon n-doping with alkali metals new states appear in the gap without having quasi-particle character, i.e. no evidence for a metallic phase is found. A comparison between VOCl and TiOX is expected to yield new insights into the importance of one-dimensionality and multi-band Mott-Hubbard physics in the oxyhalides.
Additional details
Identifiers
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Issue
- Dresden 2009 issue
- Series
- Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 44(5)
- Journal Page Range
- [1 p.]
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- DPG Spring meeting 2009 of the condensed matter section with the divisions biological physics, chemical and polymer physics, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working groups industry and business, physics of socio-economic systems
- Dates
- 22-27 Mar 2009
- Place
- Dresden (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 41043624
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BAND THEORY; D STATES; DIELECTRIC MATERIALS; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; HUBBARD MODEL; N-TYPE CONDUCTORS; ONE-DIMENSIONAL CALCULATIONS; QUASI PARTICLES; VANADIUM CHLORIDES; VANADIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHLORIDES; CHLORINE COMPOUNDS; CRYSTAL MODELS; ENERGY LEVELS; HALIDES; HALOGEN COMPOUNDS; MATERIALS; MATHEMATICAL MODELS; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS
Optional Information
- Notes
- Session: TT 6.15 Mo 13:00; No further information available