Breakdown voltage analysis of field limiting ring structure

In this paper, a computer based analysis is performed to study the effect of floating field-limiting rings (FLR) on the breakdown voltage of Si microstrip detectors. For optimum performance it is crucial to achieve the maximum breakdown voltage for Si detectors operated at very high bias due to extremely hostile radiation environment of LHC. The breakdown performance of Si microstrip detectors can be improved by implementing floating field-limiting rings (FLR) around the active detector area. In the present work, we propose a criterion for optimising the spacing of FLR with respect to the main junction. (author)