Raman scattering study on the effective γ-factor of free electrons in InSb

In experiments on light Raman scattering (RS) oscillations of experimentally effective g*-factor of conduction electrons in n-InSb in magnetic fields below the quantum limit were observed for the first time. The nonmonotonous dependence of the effective g*-factor on magnetic field observed in InSb found its qualitative explanation within the framework of a simple theory, taking into account variation of Landau level population and dispersion law nonparabolicity. It is evidant that this consideration can be extended to cover higher Landau levels, when the g* factor will be a function oscillating with the H field with a period decreasing at H→O