Published September 12, 1981
| Version v1
Journal article
Gamma- and electron radiation intensity effect on the kinetics of radiation defect accumulation in n-Ge
- 1. AN Ukrainskoj SSR, Kiev. Inst. Fiziki
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Влияние интенсивности гамма- и электронного облучения на кинетику накопления радиационных дефектов в n-Ge
Publishing Information
- Journal Title
- Pis'ma Zh. Tekh. Fiz.
- Journal Volume
- 7
- Journal Issue
- 17
- Series
- Pis'ma Zh. Tekh. Fiz.
- Journal Page Range
- 1054-1057
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 13673063
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CARRIER DENSITY; CHARGE CARRIERS; DOSE RATES; ELECTRONS; FRENKEL DEFECTS; GAMMA RADIATION; GERMANIUM; KINETIC EQUATIONS; MEDIUM TEMPERATURE; MEV RANGE 01-10; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; EQUATIONS; FERMIONS; IONIZING RADIATIONS; LEPTONS; METALS; MEV RANGE; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; VACANCIES
Optional Information
- Notes
- Letter-to-the-editor; for English translation see the journal Soviet Technical Physics Letters (USA).