Published 1986
| Version v1
Book
Acceptor implantation in Insub(0.53)Gasub(0.47)As
- 1. Centre National d'Etudes des Telecommunications (CNET), Centre de Recherches de Lannion, 22 (France)
- 2. LCR Th-CSF, 91 - Orsay (France)
Description
Be, Mg, Zn and Hg have been implanted in Insub(0.53)Gasub(0.47)As. For Be, Mg and Zn, the quick diffusion of the implanted impurities yields difficulties to get a p-type layer after implantation and annealing. On the other hand, mercury does not diffuse towards the bulk and behaves as an acceptor dopant impurity -Thin p+ layers are obtained in Insub(0.53)Gasub(0.47)As by mercury implantation - A comparison based on the chemical profiles and on the electrical results is performed for the four acceptor impurities. (author)
Additional details
Publishing Information
- Publisher
- Adam Hilger Ltd.
- Imprint Place
- Bristol (UK)
- ISBN
- 0-85498-170-5
- Imprint Title
- Gallium arsenide and related compounds 1985
- Imprint Pagination
- 778 p.
- Journal Issue
- no. 79
- Series
- Inst. Phys., Conf. Ser.
- Journal Page Range
- p. 343-348.
Conference
- Title
- 12. international symposium on gallium arsenide and related compounds.
- Dates
- 23-26 Sep 1985.
- Place
- Karuizawa (Japan).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 17074858
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; BERYLLIUM IONS; BINDING ENERGY; CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ARSENIDES; ION IMPLANTATION; LAYERS; MAGNESIUM IONS; MERCURY IONS; P-TYPE CONDUCTORS; VALENCE; ZINC IONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; ENERGY; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; IONS; MATERIALS; SEMICONDUCTOR MATERIALS