Published June 2, 1986
| Version v1
Journal article
Effect of dose rate on ion beam mixing in Nb-Si
- 1. California Institute of Technology, Pasadena, California 91125
Description
The influence of dose rate, i.e., ion flux, on ion beam mixing in Nb-Si bilayer samples was measured at room temperature and 325 0C. At the higher temperature, an increase in dose rate of a factor of 20 caused a decrease in the thickness of the mixed layer by a factor of 1.6 for equal total doses. At room temperature, the same change in flux had no effect on mixing. These results are consistent with radiation-enhanced diffusion theory in the recombination-limited regime
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 48
- Journal Issue
- 22
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 1519-1521
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 17077059
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DIFFUSION; DOSE RATES; HIGH TEMPERATURE; ION COLLISIONS; LAYERS; MIXING; NICKEL SILICIDES; PHYSICAL RADIATION EFFECTS; RECOMBINATION; THICKNESS
- Descriptors DEC
- COLLISIONS; DIMENSIONS; NICKEL COMPOUNDS; RADIATION EFFECTS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS