Published October 28, 2002 | Version v1
Journal article

Intersubband transitions in proton irradiated In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on semi-insulating InP substrate

  • 1. Department of Electrical Engineering and Electronics, UMIST, P.O. BOX 88, Manchester M60 1QD (United Kingdom)
  • 2. Naval Research Lab, 4555 Overlook Avenue, SW, Washington, DC 20375 (United States)
  • 3. Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

Description

Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells (MQWs) were investigated as a function of 1 MeV proton irradiation dose and thermal annealing temperature. It is observed that proton doses as high as 1x1014 cm-2 do not have a measurable effect on the intensity or the peak position energy of the intersubband transitions. While a dose of 1x1014 cm-2 has shown a detrimental effect on the intersubband transitions in the GaAs/AlGaAs MQWs, the intersubband transitions in InGaAs/InAlAs MQWs withstood proton doses as high as 1x1015 cm-2 and completely depleted after irradiation with a dose of 3x1015 cm-2. Furnace thermal annealing of the heavily irradiated samples shows that the depleted intersubband transitions in InGaAs/InAlAs MQW samples were almost completely recovered

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
81
Journal Issue
18
Journal Page Range
p. 3374-3376
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2002 American Institute of Physics.