Light emission characteristics in nitride semiconductor nanowires fabricated by top-down method

Nanophotonic devices made from nitride semiconductors are promising for various applications, especially those utilizing ultraviolet-visible light with low-power consumption and high driving speed. Herein, nanowire structures are fabricated from a light-emitting diode epitaxial wafer and demonstrates the effectiveness of wet etching in top-down fabrication. Spontaneous emission from active layers and unanticipated lasing derived from a GaN layer in a single nanowire are observed by microphotoluminescence measurement. Lastly, the lasing mode through a 3D simulation of the eigenmodes in this nanowire structure is clarified. (© 2024 Wiley‐VCH GmbH)