Published February 15, 2013
| Version v1
Journal article
Structural analysis of vicinal Si(1 1 0) surfaces with various off-angles
- 1. Graduate School of Engineering Science, Osaka University, Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan)
- 2. PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)
- 3. Covalent Materials Co., Ltd., Higashikou, Seirou-machi, Kitakanbara-gun, Niigata 957-0197 (Japan)
Description
We have investigated vicinal Si(1 1 0) surfaces with various off-angles using atomic force microscopy and transmission electron microscopy. The vicinal surfaces were tilted from the exact Si(1 1 0) surfaces by 2–8° toward the [11¯0] direction. Peculiar surface structures were observed with a strong dependence on the off-angles, including triangular pyramid-like structures on 2° off surfaces, line structures on 4° and 8° off surfaces and nanometer-height mountain structures on 6° off surfaces. The structures on 2° and 4° off surfaces were based on the stair-like structure composed of Si(1 1 0) terraces and monolayer steps. On the other hand, 6° and 8° off surfaces could be understood in terms of Si(1 1 0) terraces and bunched steps.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2012.08.068Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2012.08.068;
- PII
- S0169-4332(12)01446-8;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 267
- Journal Page Range
- p. 136-140
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 11. international conference on atomically controlled surfaces, interfaces and nanostructures
- Dates
- 3-7 Oct 2011
- Place
- St. Petersburg (Russian Federation)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46002818
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; FIELD EFFECT TRANSISTORS; SILICON; SILICON OXIDES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CHALCOGENIDES; ELECTRON MICROSCOPY; ELEMENTS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; TRANSISTORS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.