Published February 15, 2013 | Version v1
Journal article

Structural analysis of vicinal Si(1 1 0) surfaces with various off-angles

  • 1. Graduate School of Engineering Science, Osaka University, Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan)
  • 2. PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)
  • 3. Covalent Materials Co., Ltd., Higashikou, Seirou-machi, Kitakanbara-gun, Niigata 957-0197 (Japan)

Description

We have investigated vicinal Si(1 1 0) surfaces with various off-angles using atomic force microscopy and transmission electron microscopy. The vicinal surfaces were tilted from the exact Si(1 1 0) surfaces by 2–8° toward the [11¯0] direction. Peculiar surface structures were observed with a strong dependence on the off-angles, including triangular pyramid-like structures on 2° off surfaces, line structures on 4° and 8° off surfaces and nanometer-height mountain structures on 6° off surfaces. The structures on 2° and 4° off surfaces were based on the stair-like structure composed of Si(1 1 0) terraces and monolayer steps. On the other hand, 6° and 8° off surfaces could be understood in terms of Si(1 1 0) terraces and bunched steps.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2012.08.068

Additional details

Identifiers

DOI
10.1016/j.apsusc.2012.08.068;
PII
S0169-4332(12)01446-8;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
267
Journal Page Range
p. 136-140
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
11. international conference on atomically controlled surfaces, interfaces and nanostructures
Dates
3-7 Oct 2011
Place
St. Petersburg (Russian Federation)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46002818
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ATOMIC FORCE MICROSCOPY; FIELD EFFECT TRANSISTORS; SILICON; SILICON OXIDES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
CHALCOGENIDES; ELECTRON MICROSCOPY; ELEMENTS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; TRANSISTORS

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.