Published May 2, 2011 | Version v1
Journal article

HWCVD MoO3 nanoparticles and a-Si for next generation Li-ion anodes

  • 1. National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401 (United States)
  • 2. University of Colorado, Boulder, CO (United States)

Description

We have employed hot wire chemical vapor deposition (HWCVD) for the generation of MoO3 nanostructures at high density. Furthermore, the morphology of the nanoparticles is easily tailored by altering the HWCVD synthesis conditions. The MoO3 nanoparticles have been demonstrated as high-capacity Li-ion battery anodes for next-generation electric vehicles. Specifically, the MoO3 anodes have been shown to have approximately three times the Li-ion capacity of commercially employed graphite anodes in thick electrodes suitable for vehicular applications. However because the materials are high volume expansion materials (≥ 100%), conformal Al2O3 coatings deposited with atomic layer deposition (ALD) were required before high rate capability was demonstrated. Recently, NREL is exploring high capacity Si anode materials that have a volume expansion of ∼ 400%. It is assumed that new ALD coatings will need to be developed in order to stabilize Si as an anode material. Silicon is a superior choice for an anode material to the metal oxide structures due to both a higher capacity and a significantly lower hysteresis in the voltage vs. Li/Li+ for the charge/discharge profiles.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2011.01.337

Additional details

Identifiers

DOI
10.1016/j.tsf.2011.01.337;
PII
S0040-6090(11)00402-0;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
519
Journal Issue
14
Journal Page Range
p. 4495-4497
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
6. international conference on hot-wire CVD (Cat-CVD) process
Dates
13-17 Sep 2010
Place
Palaiseau (France)

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.