Published October 24, 2007
| Version v1
Journal article
The quantum interference effect transistor
- 1. Department of Physics, University of Arizona, 1118 E. 4th Street, Tucson, AZ 85721 (United States)
- 2. Department of Physics, Simon Fraser University, 8888 University Drive, Burnaby, BC, V5A 1S6 (Canada)
Description
We give a detailed discussion of the quantum interference effect transistor (QuIET), a proposed device which exploits the interference between electron paths through aromatic molecules to modulate the current flow. In the off state, perfect destructive interference stemming from the molecular symmetry blocks the current, while in the on state, the current is allowed to flow by locally introducing either decoherence or elastic scattering. Details of a model calculation demonstrating the efficacy of the QuIET are presented, and various fabrication scenarios are proposed, including the possibility of using conducting polymers to connect the QuIET with multiple leads
Additional details
Identifiers
- DOI
- 10.1088/0957-4484/18/42/424014;
- PII
- S0957-4484(07)49640-4;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 18
- Journal Issue
- 42
- Journal Page Range
- p. 424014
- ISSN
- 0957-4484
Conference
- Title
- From atoms to materials to devices to system architecture
- Acronym
- Symposium on nano and giga challenges in electronics and photonics
- Dates
- 12-16 Mar 2007
- Place
- Phoenix, AZ (United States)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39040541
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELASTIC SCATTERING; ELECTRONS; INTERFERENCE; POLYMERS; QUANTUM MECHANICS; SYMMETRY; TRANSISTORS
- Descriptors DEC
- ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MECHANICS; SCATTERING; SEMICONDUCTOR DEVICES