Published October 24, 2007 | Version v1
Journal article

The quantum interference effect transistor

  • 1. Department of Physics, University of Arizona, 1118 E. 4th Street, Tucson, AZ 85721 (United States)
  • 2. Department of Physics, Simon Fraser University, 8888 University Drive, Burnaby, BC, V5A 1S6 (Canada)

Description

We give a detailed discussion of the quantum interference effect transistor (QuIET), a proposed device which exploits the interference between electron paths through aromatic molecules to modulate the current flow. In the off state, perfect destructive interference stemming from the molecular symmetry blocks the current, while in the on state, the current is allowed to flow by locally introducing either decoherence or elastic scattering. Details of a model calculation demonstrating the efficacy of the QuIET are presented, and various fabrication scenarios are proposed, including the possibility of using conducting polymers to connect the QuIET with multiple leads

Additional details

Identifiers

DOI
10.1088/0957-4484/18/42/424014;
PII
S0957-4484(07)49640-4;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
18
Journal Issue
42
Journal Page Range
p. 424014
ISSN
0957-4484

Conference

Title
From atoms to materials to devices to system architecture
Acronym
Symposium on nano and giga challenges in electronics and photonics
Dates
12-16 Mar 2007
Place
Phoenix, AZ (United States)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39040541
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELASTIC SCATTERING; ELECTRONS; INTERFERENCE; POLYMERS; QUANTUM MECHANICS; SYMMETRY; TRANSISTORS
Descriptors DEC
ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MECHANICS; SCATTERING; SEMICONDUCTOR DEVICES