Published December 2011
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Growth and Characterization of ZnTe Crystal
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Description
High quality ZnTe crystals have been synthesized by vapor Transport method. The grown crystals were p-type. The concentration and mobility were 2.5 x 10 16 cm-3 and 23 cm2/Vs at 300K, according to Hall effect measurements. Surface morphology of the crystal was investigated by scanning electron microscope (SEM). Crystal orientation and lattice parameters of the crystals were also analysed by XRD. From X-ray diffraction studies the structure of the grown crystals were found to be zinc-blende. The crystal emitted light in the visible range at room temperature.
Availability note (English)
Also published in ICSE 2011: The Third International Conference on Science and Engineering
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Additional details
Publishing Information
- Imprint Place
- Yangon (Myanmar)
- Imprint Pagination
- 3 p.
- Report number
- INIS-MM--148
Conference
- Title
- 3. International Conference on Science and Engineering
- Acronym
- ICSE 2011
- Dates
- 1-2 Dec 2011
- Place
- Yangon (Myanmar)
INIS
- Country of Publication
- Myanmar
- Country of Input or Organization
- Myanmar
- INIS RN
- 43099497
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTALS; P-TYPE CONDUCTORS; X-RAY DIFFRACTION; ZINC
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELEMENTS; MATERIALS; METALS; SCATTERING; SEMICONDUCTOR MATERIALS