Published June 1, 2010
| Version v1
Journal article
Enhanced performance of bottom-contact organic field-effect transistors with M(DMDCNQI)2 buffer layers
Creators
- 1. Department of Organic and Polymeric Material, Tokyo Institute of Technology, O-okayama, 152-8552 Tokyo (Japan)
- 2. Department of Chemistry and Material Science, Tokyo Institute of Technology, O-okayama, 152-8552 Tokyo (Japan)
Description
Source and drain electrodes made of Cu or Ag in organic field-effect transistors are treated with an organic acceptor, dimethyldicyanoquinonediimine (DMDCNQI). The performance of the resulting bottom-contact pentacene transistor is improved by two orders, and is comparable to the Au top-contact devices.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2009.11.010Additional details
Identifiers
- DOI
- 10.1016/j.physb.2009.11.010;
- PII
- S0921-4526(09)01350-7;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 405
- Journal Issue
- 11
- Journal Page Range
- p. S378-S380
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 8. international symposium on crystalline organic metals, superconductors and ferromagnets; Yamada conference LXIV - ISCOM 2009
- Dates
- 12-17 Sep 2009
- Place
- Hokkaido (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41132470
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BUFFERS; COPPER; ELECTRODES; FIELD EFFECT TRANSISTORS; LAYERS; ORGANIC SEMICONDUCTORS; PENTACENE; SILVER
- Descriptors DEC
- AROMATICS; CONDENSED AROMATICS; ELEMENTS; HYDROCARBONS; MATERIALS; METALS; ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TRANSISTORS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.