Omnidirectional photonic band gap in magnetron sputtered TiO2/SiO2 one dimensional photonic crystal
Creators
- 1. Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India)
- 2. Photonics & Nanotechnology Section, BARC-Vizag, Autonagar, Atomic & Molecular Physics Division, Bhabha Atomic Research Centre facility, Visakhapatnam 530 012 (India)
Description
One dimensional photonic crystal (1DPC) of TiO2/SiO2 multilayer has been fabricated by sequential asymmetric bipolar pulsed dc magnetron sputtering of TiO2 and radio frequency magnetron sputtering of SiO2 to achieve wide omnidirectional photonic band in the visible region. The microstructure and optical response of the TiO2/SiO2 photonic crystal have been characterized by atomic force microscopy, scanning electron microscopy and spectrophotometry respectively. The surface of the photonic crystal is very smooth having surface roughness of 2.6 nm. Reflection and transmission spectra have been measured in the wavelength range 300 to 1000 nm for both transverse electric and transverse magnetic waves. Wide high reflection photonic band gap (∆ λ = 245 nm) in the visible and near infrared regions (592–837 nm) at normal incidence has been achieved. The measured photonic band gap (PBG) is found well matching with the calculated photonic band gap of an infinite 1DPC. The experimentally observed omnidirectional photonic band 592–668 nm (∆ λ = 76 nm) in the visible region with band to mid-band ratio ∆ λ/λ = 12% for reflectivity R > 99% over the incident angle range of 0°–70° is found almost matching with the calculated omnidirectional PBG. The omnidirectional reflection band is found much wider as compared to the values reported in literature so far in the visible region for TiO2/SiO2 periodic photonic crystal. - Highlights: • TiO2/SiO2 1DPC has been fabricated using magnetron sputtering technique. • Experimental optical response is found good agreement with simulation results. • Wide omnidirectional photonic band in the visible spectrum has been achieved.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2015.12.069Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2015.12.069;
- PII
- S0040-6090(16)00002-X;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 599
- Journal Page Range
- p. 138-144
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48020781
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CRYSTALS; ENERGY GAP; LAYERS; MICROSTRUCTURE; PHOTONS; RADIOWAVE RADIATION; REFLECTION; REFLECTIVITY; ROUGHNESS; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON OXIDES; SPECTROPHOTOMETRY; SURFACES; TITANIUM OXIDES; VISIBLE SPECTRA
- Descriptors DEC
- BOSONS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTARY PARTICLES; MASSLESS PARTICLES; MICROSCOPY; MINERALS; OPTICAL PROPERTIES; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SILICON COMPOUNDS; SPECTRA; SURFACE PROPERTIES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.