Published July 1997 | Version v1
Journal article Metadata-only

Charge-carrier lifetime in Hg1-xCdxTe (x=0.22) structures grown by molecular-beam epitaxy

Creators

  • 1. Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk (Russian Federation)
  • 2. Siberian Physicotechnical Institute, 634050 Tomsk (Russian Federation)

Description

Measurements of the charge carrier lifetime in epitaxial structures based on narrow-gap Hg1-xCdxTe (x=0.22), grown by molecular-beam epitaxy with pulsed excitation using radiation at different wavelengths, are reported. It is shown that in p-type epitaxial films the lifetime is determined by the Auger recombination mechanism at temperatures corresponding to the impurity conductivity, and for n-type epitaxial films recombination via local centers is characteristic

Additional details

Identifiers

DOI
10.1134/1.1187058;
PII
S1063-7826(97)00307-4;

Publishing Information

Journal Title
Semiconductors
Journal Volume
31
Journal Issue
7
Journal Page Range
p. 655-657
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35046676
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
AUGER EFFECT; CADMIUM COMPOUNDS; CADMIUM TELLURIDES; CARRIER LIFETIME; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; EXPERIMENTAL DATA; MERCURY TELLURIDES; MOLECULAR BEAM EPITAXY; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; RECOMBINATION; SURFACE AREA; THIN FILMS
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; DATA; ELECTRICAL PROPERTIES; EPITAXY; FILMS; INFORMATION; LIFETIME; MATERIALS; MERCURY COMPOUNDS; NUMERICAL DATA; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 31, 774-776 (July 1997); (c) 1997 American Institute of Physics.