Published November 2014
| Version v1
Journal article
Drift-diffusion mechanism of transient process in p+p0-i-n+-structure with carrier concentration gradient in base region
- 1. AS RU, Physical-technical institute, Tashkent (Uzbekistan)
Description
The experimentally observed low values of recovery time of the reverse current in high frequency diodes with carrier concentration gradient in base region (p+p0-i-n+-structures) are explained by the diffusion and drift mechanisms of charge transport at transient processes. (authors)
Additional details
Additional titles
- Original title (Russian)
- Диффузионно-дрейфовый механизм переходного процесса в p⁺p⁰-i-n⁺-структуре с градиентной концентрацией носителей в базе
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 16
- Journal Issue
- 6
- Journal Page Range
- p. 430-433
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 46048639
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BORON; CHARGE CARRIERS; CHARGE TRANSPORT; CURRENTS; PHOSPHORUS IONS; P-N JUNCTIONS; P-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS; SPACE CHARGE; TEMPERATURE RANGE 1000-4000 K; THERMAL DIFFUSION; TRANSIENTS; VAPOR PHASE EPITAXY; VARIABLE CAPACITANCE DIODES
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL GROWTH METHODS; DIFFUSION; ELEMENTS; EPITAXY; IONS; MATERIALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- 9 refs., 4 figs.