Published 2004
| Version v1
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Sputtering of silicon and silicon carbide at irradiation by monoatomic Ar+ and polyatomic SF5+ ions
- 1. AN RUz, Inst. Ehlektroniki im. U.A. Arifova, Tashkent (Uzbekistan)
Description
no abstract available
Files
36107200.pdf
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Additional details
Additional titles
- Original title (Russian)
- Распыление кремния и карбида кремния при бомбардировке моно Ар
Publishing Information
- Publisher
- Izdatel'stvo UNTs DO
- Imprint Place
- Moscow (Russian Federation)
- Imprint Title
- Summaries of reports of the XXXIV International conference on physics of charged particle-crystal interactions
- Imprint Pagination
- 168 p.
- Journal Page Range
- p. 91
- Report number
- INIS-RU--491
Conference
- Title
- 34. International conference on physics of charged particle-crystal interactions
- Original Conference Title
- XXXIV mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
- Dates
- 31 May - 2 Jun 2004
- Place
- Moscow (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 36107200
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- ARGON IONS; EFFICIENCY; ION BEAMS; SILICON; SILICON CARBIDES; SPUTTERING; SULFUR FLUORIDES
- Descriptors DEC
- BEAMS; CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; ELEMENTS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; IONS; SEMIMETALS; SILICON COMPOUNDS; SULFUR COMPOUNDS
Optional Information
- Notes
- 1 ref. Imprint:Tezisy dokladov XXXIV mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami