Published June 1994
| Version v1
Journal article
Total dose response of transconductance in MOSFETs at low temperature
- 1. RLP Research, Inc., Albuquerque, NM (United States)
- 2. Naval Surface Warfare Center, Crane, IN (United States)
- 3. S-Cubed, Mission Viejo, CA (United States)
Description
N and p channel MOSFETs from four bulk CMOS technologies and two CMOS/SIMOX technologies were characterized for total dose response up to 1 Mrad (SiO2) at temperatures from 10K to 120K. The peak transconductance in the linear region increased in n channel devices and decreased in p channel devices for devices with lightly doped drain (LDD) implants. These changes were much larger as the temperature was decreased and were as much as a factor of 50 in p MOSFETs at 10K. The one technology without LDD showed only a minor change in gm with dose even at 10K. The changes in transconductance are most likely a result of hole trapping in the spacer oxide affecting the series resistance
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 41
- Journal Issue
- 3Pt1
- Journal Page Range
- p. 549-555.
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- 2. European conference on radiations and their effects on components and systems.
- Acronym
- RADECS '93
- Dates
- 13-16 Sep 1993.
- Place
- Saint Malo (France).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 26041932
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRICAL PROPERTIES; MOSFET; PERFORMANCE; PHYSICAL RADIATION EFFECTS; RADIATION HARDENING; RESPONSE FUNCTIONS; SILICON OXIDES; TEMPERATURE DEPENDENCE; TRAPS
- Descriptors DEC
- CHALCOGENIDES; FIELD EFFECT TRANSISTORS; FUNCTIONS; HARDENING; MOS TRANSISTORS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-930953--.