Published October 1, 2021 | Version v1
Journal article

Investigation of the effect of blade electrode width on performance of phase change memory

  • 1. State Key Laboratory of Functional Materials for Informatics, Nanotechnology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
  • 2. School of Electronic and Information Engineering, Suzhou University of Science and Technology, Suzhou (China)

Description

The blade bottom electrode contact (BEC) can significantly reduce the programming current of the phase change memory (PCM) and achieve low power consumption compared with the typical T-shaped PCM cell. The method of controlling the electrode width by controlling the thickness of the deposited layer can make the size break through the limit of photolithography. This paper proves that the RESET programming current and power consumption of the PCM decrease linearly with the decrease of the blade BEC width, and builds a theoretical model to verify it by simulating the distribution internal temperature field. Based on the above research, the cell life of PCM with different electrode widths was tested, and it was proved that the endurance of PCM increased with the decrease of the width of the blade electrode, caused by the lower power consumption of the narrower electrode. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6641/ac1056

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
36
Journal Issue
10
Journal Page Range
[6 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53056054
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COMPARATIVE EVALUATIONS; DEPOSITS; ELECTRODES; LAYERS; PERFORMANCE
Descriptors DEC
EVALUATION