Characteristics of Al2O3/ZrO2 laminated films deposited by ozone-based atomic layer deposition for organic device encapsulation
- 1. Division of Materials Science and Engineering, Hanyang University, Seoul (Korea, Republic of)
- 2. Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul (Korea, Republic of)
Description
We investigated the characteristics of 100 nm-thick Al2O3/ZrO2 laminated films grown by ozone (O3)-based atomic layer deposition (ALD) at low temperature (100 °C) as thin film encapsulation (TFE). Calcium (Ca) test was performed at a relative humidity (RH) of 50% with a temperature of 50 °C to derive the water vapor transmission rates (WVTRs) of aluminum oxide (Al2O3)-, zirconium oxide (ZrO2)-, and Al2O3/ZrO2-laminated films. Al2O3/ZrO2-laminated films exhibited better permeation barrier properties than Al2O3 or ZrO2 single layer films. In Al2O3/ZrO2 laminated films, permeation barrier properties improved as the number of alternating layers increased. Permeation barrier properties were closely related to the number of interfaces because of the ZrAlxOy phase that formed at the interface between the Al2O3 and ZrO2 sublayers. The ZrAlxOy phase was denser than single layers of Al2O3 and ZrO2 and had a homogeneous amorphous structure. The formation of a ZrAlxOy phase in Al2O3/ZrO2 laminated film effectively improved the permeation barrier properties of the film. - Highlights: • All films were deposited by ozone-based atomic layer deposition at 100 °C. • Al2O3/ZrO2-laminated films showed better barrier properties than single films. • ZrAlxOy phase formed at the interface between Al2O3 and ZrO2 sublayers. • The number of alternating layers of Al2O3 and ZrO2 affected film properties.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2015.12.044Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2015.12.044;
- PII
- S0040-6090(15)01294-8;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 599
- Journal Page Range
- p. 119-124
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48020778
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; ALUMINIUM OXIDES; AMORPHOUS STATE; CALCIUM; DEPOSITION; ENCAPSULATION; HUMIDITY; INTERFACES; LAYERS; OZONE; TEMPERATURE DEPENDENCE; THIN FILMS; WATER VAPOR; ZIRCONIUM; ZIRCONIUM OXIDES
- Descriptors DEC
- ALKALINE EARTH METALS; ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELEMENTS; FILMS; FLUIDS; GASES; METALS; MOISTURE; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; VAPORS; ZIRCONIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.