Published 1992 | Version v1
Journal article Metadata-only

Silicon doping of GaAs single crystals

Creators

  • 1. Inst. of Physics, Czechoslovak Academy of Sciences, Prague (Czechoslovakia)

Description

The silicon doped GaAs single crystals were grown by means of a horizontal Bridgman method. The relation between the free carrier concentration and silicon concentration determined by chemical analysis was examinated. (orig.)

Additional details

Publishing Information

Journal Title
Crystal Research and Technology
Journal Volume
27
Journal Issue
4
Series
Cryst. Res. Technol.
Journal Page Range
477-479
ISSN
0232-1300
CODEN
CRTED

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
23086043
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BRIDGMAN METHOD; CARRIER DENSITY; CHEMICAL COMPOSITION; CRYSTAL DOPING; DOPED MATERIALS; GALLIUM ARSENIDES; MONOCRYSTALS; SILICON ADDITIONS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CRYSTALS; GALLIUM COMPOUNDS; MATERIALS; PNICTIDES