Asymptotically Correct Finite Difference Schemes for Highly Oscillatory ODEs
Creators
- 1. Inst. f. Analysis u. Scientific Computing, Technische Universitaet Wien, Wiedner Hauptstr. 8, A-1040 Wien (Austria)
Description
We are concerned with the numerical integration of ODE-initial value problems of the form ε2φxx+a(x)φ = 0 with given a(x)≥a0>0 in the highly oscillatory regime 0<ε(appearing as a stationary Schroedinger equation, e.g.). In two steps we derive an accurate finite difference scheme that does not need to resolve each oscillation: With a WKB-ansatz the dominant oscillations are ''transformed out'', yielding a much smoother ODE. For the resulting oscillatory integrals we devise an asymptotic expansion both in ε and h. The resulting scheme typically has a step size restriction of h = o(√(ε)). If the phase of the WKB-transformation can be computed explicitly, then the scheme is asymptotically correct with an error bound of the order o(ε3h2). As an application we present simulations of a 1D-model for ballistic quantum transport in a MOSFET (metal oxide semiconductor field-effect transistor).
Additional details
Identifiers
- DOI
- 10.1063/1.3498358;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1281
- Journal Issue
- 1
- Journal Page Range
- p. 206-209
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- International conference of numerical analysis and applied mathematics 2010
- Acronym
- ICNAAM 2010
- Dates
- 19-25 Sep 2009
- Place
- Rhodes (Greece)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42028644
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALGEBRA; ASYMPTOTIC SOLUTIONS; COMPUTERIZED SIMULATION; INTEGRAL EQUATIONS; MATRICES; MOSFET; OSCILLATIONS; SCHROEDINGER EQUATION; WKB APPROXIMATION
- Descriptors DEC
- APPROXIMATIONS; CALCULATION METHODS; DIFFERENTIAL EQUATIONS; EQUATIONS; FIELD EFFECT TRANSISTORS; MATHEMATICAL SOLUTIONS; MATHEMATICS; MOS TRANSISTORS; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTOR DEVICES; SIMULATION; TRANSISTORS; WAVE EQUATIONS
Optional Information
- Notes
- (c) 2010 American Institute of Physics