Published May 1985
| Version v1
Journal article
Deep levels in GaAs and AlGaAs grown by MBE
- 1. Hokkaido Univ., Sapporo (Japan). Faculty of Engineering
Description
Deep levels in undoped GaAs and Si doped AlGaAs grown by molecular beam epitaxy were investigated using deep level transient spectroscopy. Four electron traps were detected in undoped GaAs. Two of them showed an increase in concentration when As vapor pressure increased during growth. DX center was found in Si doped Alsub(0.3)Gasub(0.7)As. The concentration of deep levels both in GaAs and AlGaAs was reduced by Pb flux incident upon the crystal surface during growth. (author)
Additional details
Publishing Information
- Journal Title
- Hokkaido Daigaku Kogakubu Kenkyu Hokoku
- Journal Issue
- no.126
- Series
- Hokkaido Daigaku Kogakubu Kenkyu Hokoku.
- ISSN
- 0385-602X
- CODEN
- HDKKA
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 17037664
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTIVATION ENERGY; ALUMINIUM ARSENIDES; ARRHENIUS EQUATION; CRYSTAL GROWTH; DOPED MATERIALS; ENERGY LEVELS; EPITAXY; GALLIUM ARSENIDES; IRRADIATION; LEAD; MOLECULAR BEAMS; TEMPERATURE DEPENDENCE; TRAPPING
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; ELEMENTS; ENERGY; GALLIUM COMPOUNDS; MATERIALS; METALS