Electron subbands on InP

The semiconductor InP has found some recent interest for device applications. MISFETs have been fabricated and some first results of physical studies of the electron subbands have appeared in the literature. In a publication that will appear elsewhere we present the results of an investigation of InP subbands. Electrons have been observed on (100) n- and p-type substrates with doping up to 6 x 1016 cm-3. The magnetoconductance oscillations are studied to obtain subband occupancies and to construct a curve of subband energy separation versus electron density. Far-infrared cyclotron resonance is used to examine interface-perturbed conduction. (orig./TW)