Published October 1993
| Version v1
Journal article
Ultra-shallow junction formation in silicon using phosphorus and boron doping by electron irradiation
Description
A new method for semiconductor impurity doping using an electron beam produced by means of a glow discharge has been developed. A carrier concentration of Np ≥ 1020 cm-3 and a junction depth of Xj ≤ 0.1 μm have been obtained with little damage and small lateral doping. A solar cell with excellent performance was successfully fabricated. (author)
Additional details
Publishing Information
- Journal Title
- Vacuum
- Journal Volume
- 44
- Journal Issue
- 10
- Journal Page Range
- p. 987-989.
- ISSN
- 0042-207X
- CODEN
- VACUAV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 25004902
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BORON ADDITIONS; CARRIER DENSITY; CRYSTAL DOPING; DEPTH; ELECTRON BEAMS; GLOW DISCHARGES; IMPURITIES; PHOSPHORUS ADDITIONS; SEMICONDUCTOR JUNCTIONS; SILICON; SILICON SOLAR CELLS
- Descriptors DEC
- BEAMS; DIMENSIONS; DIRECT ENERGY CONVERTERS; ELECTRIC DISCHARGES; ELEMENTS; LEPTON BEAMS; PARTICLE BEAMS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR CELLS