Published February 2003 | Version v1
Journal article

Characteristics of SrBi2Ta2O9 ferroelectric films on GaAs with a TiO2 buffer layer

  • 1. Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

Description

Mainly [115]-oriented SrBi2Ta2O9 (SBT) films were prepared on GaAs(100) substrates with TiO2 buffer layers. Both the SBT films and the TiO2 buffer layers were deposited by pulsed laser deposition (PLD) using a KrF excimer laser. The depth profile of the constituent elements observed by Auger electron spectrometry (AES) shows no remarkable diffusion at both the interfaces between SBT and TiO2 and between TiO2 and the GaAs substrate. The electrical characteristics of the Pt/SBT/TiO2/GaAs(100) structures show a ferroelectric hysteresis loop with a small remanent polarization (∝0.5 μC/cm2). (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s003390201417

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
76
Journal Issue
2
Journal Page Range
p. 197-199
ISSN
0947-8396
CODEN
APAMFC

Optional Information

Notes
With 5 figs., 18 refs.