Published 2003 | Version v1
Miscellaneous Metadata-only

Intersublevel relaxation dependence of carrier hopping in self-organised InAs quantum dot heterostructures

Creators

  • 1. Department of Electronic Engineering, Chang Gung University, Tao-Yuan (China)
  • 2. Kuong-Wu Institute of Technology, Taipei (China)
  • 3. Telecommunication Laboratories, Chunghwa Telecom Co., Ltd., Tao-Yuan (China)

Description

no abstract available

Part of:
Abstracts of The European Materials Conference E-MRS 2003 Fall Meeting

Additional details

Publishing Information

Imprint Title
Abstracts of The European Materials Conference E-MRS 2003 Fall Meeting
Imprint Pagination
287 p.
Journal Page Range
p. 212

Conference

Title
European Materials Conference E-MRS 2003 Fall Meeting
Dates
15-19 Sep 2003
Place
Warsaw (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
35101240
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CHARGE CARRIERS; CHARGE TRANSPORT; ELECTRON-PHONON COUPLING; GALLIUM ARSENIDES; GRAIN SIZE; HETEROJUNCTIONS; INDIUM ARSENIDES; NANOSTRUCTURES; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM MECHANICS; RELAXATION TIME; SILICON ADDITIONS; SPECTRAL SHIFT; SUBSTRATES; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY
Descriptors DEC
ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; COUPLING; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MECHANICS; MICROSCOPY; MICROSTRUCTURE; ORGANIC COMPOUNDS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SILICON ALLOYS; SIZE

Optional Information